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Transistor
2SB956
Silicon PNP epitaxial planer type
For low-frequency power amplification Complementary to 2SD1280
Unit: mm
s Features
q q q
4.5±0.1 1.6±0.2
1.5±0.1
1.0–0.2
+0.1
Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C)
Ratings –20 –20 –5 –2 –1 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C
2.6±0.1
0.4max.
45°
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1
4.0–0.20
0.4±0.
2SB956 Datasheet
