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2SB968 - PNP Transistor

Key Features

  • 7.3± 0.1 1.8± 0.1 Unit µA µA µA V V.
  • 50.
  • 40 50 220.
  • 1.
  • 1.5 150 45 VCE(sat) VBE(sat) fT Cob V V MHz pF.
  • h FE Rank classification P 50 to 100 Q 80 to 160 R 120 to 220 Rank hFE 1 Power Transistors PC.
  • Ta 32.
  • 4.0 TC=Ta 28.
  • 3.5 2SB968 IC.
  • VCE TC=25˚C IB=.
  • 40mA.
  • 35mA VCE(sat).
  • IC Collector to emitter saturation voltage VCE(sat) (V).
  • 10 IC/IB=10 Collector power dissipation PC (W) Collec.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SB968 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD1295 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max q q q Possible to solder the radiation fin directly to printed cicuit board High collector to emitter VCEO Large collector power dissipation PC 0.93±0.1 1.0± 0.1 0.1± 0.05 0.5± 0.1 0.75± 0.1 2.3± 0.1 4.6± 0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1 2 3 (Ta=25˚C) Ratings –50 –40 –5 –3 –1.5 20 150 –55 to +150 Unit V V V A A W 0.6 2.3 2.3 0.75 6.5±0.