The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistor
2SC1215
Silicon NPN epitaxial planer type
For high-frequency (VHF band) amplification and oscillation
5.0±0.2
Unit: mm 4.0±0.2
5.1±0.2
s Features
q High transition frequency fT.
13.5±0.5
/ s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
e e) Collector to base voltage
VCBO
30
V
c e. d typ Collector to emitter voltage VCEO
20
V
n d stag tinue Emitter to base voltage
VEBO
2.3±0.2
3
V
le on Collector current
IC
50
mA
a elifecyc , disc Collector power dissipation PC
400
mW
n u ct ped Junction temperature
Tj
150
˚C
rodu d ty Storage temperature
Tstg
–55 ~ +150
˚C
+0.2
0.45 –0.1 1.27
+0.2
0.45 –0.1 1.27
123 2.54±0.
2SC1215 Datasheet
