2SC1359 - Silicon NPN Transistor

Panasonic

Key Features

Optimum for RF amplification of FM/AM radios.
High transition frequency fT 0.7±0.1.
Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 30 V c type Collector-emitter voltage (Base open) VCEO 20 V n d ge. ed Emitter-base voltage (Collector open) VEBO 5 2.3±0.2 V le sta ntinu Collector current IC 30 mA a e cyc isco Collector power dissipation PC 400 mW life d, d Junction.

2SC1359 silicon npn transistor by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SC1359
Manufacturer	Panasonic
File Size	259.47 KB
Description	Silicon NPN Transistor
Datasheet	2SC1359 Datasheet

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Transistors 2SC1359 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA0838 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 ■ Features • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 30 V c type Collector-emitter voltage (Base open) VCEO 20 V n d ge. ed Emitter-base voltage (Collector open) VEBO 5 2.3±0.2 V le sta ntinu Collector current IC 30 mA a e cyc isco Collector power dissipation PC 400 mW life d, d Junction temperature Tj 150 °C n u duct type Storage temperature Tstg −55 to +150 °C 0.45+–00..115 2.5+–00..26 2.5+–00..26 0.45+–00..