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2SC1509 - Silicon NPN Transistor

Key Features

  • High collector-emitter voltage (Base open) VCEO 13.5±0.5 0.7.
  • +00..23.
  • Optimum for the driver stage of a low-frequency and 25 W to 30 0.7±0.1 W output amplifier.
  • Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 80 V c type Collector-emitter voltage (Base open) VCEO 80 V n d ge. ed Emitter-base voltage (Collector open) VEBO 5 (3.2) V le sta ntinu Collector current IC 0.5 A a e cyc.

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Datasheet Details

Part number 2SC1509
Manufacturer Panasonic
File Size 251.78 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC1509 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors 2SC1509 Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SA0777 (2SA777) 5.9±0.2 Unit: mm 4.9±0.2 8.6±0.2 ■ Features • High collector-emitter voltage (Base open) VCEO 13.5±0.5 0.7–+00..23 • Optimum for the driver stage of a low-frequency and 25 W to 30 0.7±0.1 W output amplifier ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 80 V c type Collector-emitter voltage (Base open) VCEO 80 V n d ge. ed Emitter-base voltage (Collector open) VEBO 5 (3.2) V le sta ntinu Collector current IC 0.