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2SC2497A - NPN Transistor

Key Features

  • 05±0.1.
  • High collector-emitter voltage (Base open) VCEO.
  • TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 16.0±1.0.
  • Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 70 V c type) Collector-emitter voltage 2SC2497 VCEO 50 V n d ge. ed (Base open) 2SC2497A 60 le sta ntinu Emitter-base voltage (Collector open) VEBO 5 V a e cyc isco Collector current IC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SA1096, 2SC1096A φ 3.16±0.1 8.0+–00..15 Unit: mm 3.2±0.2 3.8±0.3 11.0±0.5 ■ Features 3.05±0.1 • High collector-emitter voltage (Base open) VCEO • TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 16.0±1.0 ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 70 V c type) Collector-emitter voltage 2SC2497 VCEO 50 V n d ge. ed (Base open) 2SC2497A 60 le sta ntinu Emitter-base voltage (Collector open) VEBO 5 V a e cyc isco Collector current IC 1.