The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistors
2SC3811
Silicon NPN epitaxial planar type
For high-speed switching
■ Features • Low collector-emitter saturation voltage VCE(sat)
5.0±0.2
Unit: mm 4.0±0.2
5.1±0.2
0.7±0.2 12.9±0.5
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
/ Collector-base voltage (Emitter open) VCBO
40
V
0.45+–00..115
0.45+–00..115
e Collector-emitter voltage (E-B short) VCES
40
V
c type) Emitter-base voltage (Collector open) VEBO
5
V
n d ge. ed Collector current
IC
100
mA
2.3±0.2
le sta ntinu Peak collector current
ICP
300
mA
a e cyc isco Collector power dissipation
PC
400
mW
life d, d Junction temperature
Tj
150
°C
n u duct type Storage temperature
Tstg −55 to +150 °C
2.5+–00..26
2.5+–00..
2SC3811 Datasheet
