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2SC3976 - Silicon NPN Transistor

Datasheet Summary

Features

  • q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25˚C) Ratings 800 800 500 8 25 12 6 150 3.5 150.
  • 55 to +150 Unit V V V V A A A W ˚C ˚C 26.0±0.5 10.0 1.5 2.0 4.0 1.5 20.0±0.5 2.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collecto.

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Datasheet Details

Part number 2SC3976
Manufacturer Panasonic Semiconductor
File Size 62.12 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC3976 Datasheet
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Full PDF Text Transcription

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Power Transistors 2SC3976 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 s Features q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25˚C) Ratings 800 800 500 8 25 12 6 150 3.5 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 26.0±0.5 10.0 1.5 2.0 4.0 1.5 20.0±0.5 2.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 2.0±0.
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