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2SC4417 - Silicon NPN Transistor

Key Features

  • q q q 0.425 1.25±0.1 0.425 High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.9±0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO V.

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Datasheet Details

Part number 2SC4417
Manufacturer Panasonic
File Size 36.92 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC4417 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SC4417 Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit: mm 2.1±0.1 s Features q q q 0.425 1.25±0.1 0.425 High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.9±0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 45 35 4 50 150 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 0.7±0.1 0 to 0.1 0.2±0.