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2SC5026 - NPN Transistor

Key Features

  • 2.5±0.1 3˚ 4.0.
  • +00..2205.
  • Low collector-emitter saturation voltage VCE(sat).
  • High collector-emitter voltage (Base open) VCEO.
  • Mini Power type package, allowing downsizing of the equip- ment and automatic insertion through the tape packing and the magazine packing 1 0.4±0.08 1.5±0.1 23 0.5±0.08 3˚ 1.0.
  • +00..21 0.4±0.04 /.
  • Absolute Maximum Ratings Ta = 25°C e pe) Parameter Symbol Rating Unit 2.6±0.1 0.4 max. 45˚ 3.0±0.15 c e. d ty Coll.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors 2SC5026 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890 4.5±0.1 1.6±0.2 Unit: mm 1.5±0.1 ■ Features 2.5±0.1 3˚ 4.0–+00..2205 • Low collector-emitter saturation voltage VCE(sat) • High collector-emitter voltage (Base open) VCEO • Mini Power type package, allowing downsizing of the equip- ment and automatic insertion through the tape packing and the magazine packing 1 0.4±0.08 1.5±0.1 23 0.5±0.08 3˚ 1.0–+00..21 0.4±0.04 / ■ Absolute Maximum Ratings Ta = 25°C e pe) Parameter Symbol Rating Unit 2.6±0.1 0.4 max. 45˚ 3.0±0.15 c e.