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Power Transistors
2SC5036, 2SC5036A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
s Features
q q q q q
4.1±0.2 8.0±0.2 Solder Dip
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 900 1000 900 1000 800 7 2 1 0.3 30 2 150 –55 to +150 Unit V
15.0±0.3
3.0±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SC5036 2SC5036A 2SC5036 Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg
13.7–0.2
+0.5
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4
2.6±0.
2SC5036A Datasheet
