q q q
Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.65 max. 1.0 1.0
0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
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Transistor
2SC5346
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification Complementary to 2SA1982
6.9±0.1
0.15
Unit: mm
1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.5 4.5±0.1 0.45–0.05 2.5±0.1
0.7
4.0
s Features
q q q
Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob.
0.65 max.
1.0 1.0
0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*1
(Ta=25˚C)
Ratings 150 150 5 100 50 1.0 150 –55 ~ +150 1cm2 Unit V V V mA mA W ˚C ˚C
0.45–0.05
+0.1
+0.1
2.5±0.5
2.5±0.
2SC5346 Datasheet
