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2SC5457 - NPN Transistor

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Features

  • 0.8max 1.0±0.2 1.0±0.1 2.5±0.1 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) 0.93±0.1 0.1±0.05 0.5±0.1 2.3±0.1 4.6±0.1 0.75±0.1 q Satisfactory linearity of foward current transfer ratio hFE / s Absolute Maximum Ratings (TC=25˚C) 1 2 3 1:Base 2:Collector 3:Emitter U Type Package e ) Parameter Symbol Ratings Unit c type Collector to base voltage VCBO 500 V n d tage. ued VCES 500 5.5±0.2 1.8 V s tin Collector to emitter vo.

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Datasheet Details

Part number 2SC5457
Manufacturer Panasonic Semiconductor
File Size 185.65 KB
Description NPN Transistor
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Full PDF Text Transcription

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Power Transistors 2SC5457 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 6.5±0.1 5.3±0.1 4.35±0.1 Unit: mm 2.3±0.1 0.5±0.1 7.3±0.1 1.8±0.1 s Features 0.8max 1.0±0.2 1.0±0.1 2.5±0.1 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) 0.93±0.1 0.1±0.05 0.5±0.1 2.3±0.1 4.6±0.1 0.75±0.1 q Satisfactory linearity of foward current transfer ratio hFE / s Absolute Maximum Ratings (TC=25˚C) 1 2 3 1:Base 2:Collector 3:Emitter U Type Package e ) Parameter Symbol Ratings Unit c type Collector to base voltage VCBO 500 V n d tage. ued VCES 500 5.5±0.2 1.8 V s tin Collector to emitter voltage le on VCEO 400 V a elifecyc disc Emitter to base voltage VEBO 7 V 13.3±0.
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