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2SC5609 - NPN Transistor

Key Features

  • High forward current transfer ratio hFE 5˚.
  • SSS-Mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing.
  • Absolute Maximum Ratings Ta = 25°C 0.23+.
  • 00..0025 12 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0.15 min. / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 60 V c type Collector-emitter voltage (Base open) VCEO 50 0 to 0.01 0.52±0.03 V n d ge. ed Emitter-base v.

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Transistors 2SC5609 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021 0.33+–00..0025 Unit: mm 0.10+–00..0025 3 0.15 min. 0.80±0.05 1.20±0.05 ■ Features • High forward current transfer ratio hFE 5˚ • SSS-Mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings Ta = 25°C 0.23+–00..0025 12 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0.15 min. / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 60 V c type Collector-emitter voltage (Base open) VCEO 50 0 to 0.01 0.52±0.03 V n d ge.