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Transistors
2SC5609
Silicon NPN epitaxial planar type
For general amplification Complementary to 2SA2021
0.33+–00..0025
Unit: mm
0.10+–00..0025
3
0.15 min.
0.80±0.05 1.20±0.05
■ Features
• High forward current transfer ratio hFE
5˚
• SSS-Mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
0.23+–00..0025
12
(0.40) (0.40) 0.80±0.05 1.20±0.05
5˚
0.15 min.
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
60
V
c type Collector-emitter voltage (Base open) VCEO
50
0 to 0.01 0.52±0.03
V
n d ge.