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2SC5632 - NPN Transistor

Key Features

  • s 3.
  • High transition frequency fT.
  • S-Mini type package, allowing downsizing of the equipment 0.15+.
  • 00..0150 1.25±0.10 2.1±0.1 5˚ and automatic insertion through the tape packing 1 2 (0.65) (0.65) 1.3±0.1 /.
  • Absolute Maximum Ratings Ta = 25°C 2.0±0.2 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 15 0.2±0.1 V c e. d ty Collector-emitter voltage (Base open) VCEO 8 V n d stag tinue Emitter-base voltage (Collector open.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching Unit: mm (0.425) 0.3+–00..01 ■ Features 3 • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment 0.15+–00..0150 1.25±0.10 2.1±0.1 5˚ and automatic insertion through the tape packing 1 2 (0.65) (0.65) 1.3±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.0±0.2 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 15 0.2±0.1 V c e. d ty Collector-emitter voltage (Base open) VCEO 8 V n d stag tinue Emitter-base voltage (Collector open) VEBO 3 0 to 0.1 0.9±0.1 0.9–+00..