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2SC5946 - NPN Transistor

Key Features

  • s 3 0.15 min. 0.80±0.05 1.20±0.05.
  • High transition frequency fT.
  • SSS-Mini type package, allowing downsizing of the equipment 5˚ 0.15 min. and automatic insertion through the tape packing.
  • Absolute Maximum Ratings Ta = 25°C 0.23+.
  • 00..0025 12 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 30 V pe) Collector-emitter voltage (Base open) VCEO 20 V nc d ge. ed ty Emitter-base voltage (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors 2SC5946 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.33+–00..0025 0.10+–00..0025 ■ Features 3 0.15 min. 0.80±0.05 1.20±0.05 • High transition frequency fT • SSS-Mini type package, allowing downsizing of the equipment 5˚ 0.15 min. and automatic insertion through the tape packing. ■ Absolute Maximum Ratings Ta = 25°C 0.23+–00..0025 12 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 30 V pe) Collector-emitter voltage (Base open) VCEO 20 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO 3 0 to 0.01 0.52±0.