2SC6012
Key Features
- High breakdown voltage, and high reliability through the use of a glass passivation layer
- High-speed switching
- Wide safe oeration area
- 5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5
- 5±0.3 5˚ 5˚
- Part: 2SC6012
- Description: Silicon NPN triple diffusion Power Transistor
- Category: Transistor
- Manufacturer: Panasonic
- Size: 89.03 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SC6017 | Inchange Semiconductor | Silicon NPN Power Transistor |
| 2SC6011A | Sanken | PNP PowerTransistor |
| 2SC6010 | Toshiba | Silicon NPN Transistor |
| C6010 | Toshiba | 2SC6010 |