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Power Transistors
2SC6012
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
3.0±0.3 5˚
■ Features
• High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe oeration area
26.5±0.5
(23.4)
(2.0)
5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5
5.5±0.