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2SC6036 - Silicon NPN Transistors

Key Features

  • 3 0.15 min. 0.80±0.05 1.20±0.05.
  • Low collector-emitter saturation voltage VCE(sat) 5° 0.15 min.
  • SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
  • Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit 0.23+.
  • 00..0052 12 (0.40) (0.40) 0.80±0.05 1.20±0.05 5° Collector-base voltage (Emitter open) e e) Collector-emitter voltage (Base open) c . typ Emitter-base voltage (Collector open).

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Datasheet Details

Part number 2SC6036
Manufacturer Panasonic
File Size 524.30 KB
Description Silicon NPN Transistors
Datasheet download datasheet 2SC6036 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2162 Unit: mm 0.33+−00..0052 0.10+−00..0052  Features 3 0.15 min. 0.80±0.05 1.20±0.05  Low collector-emitter saturation voltage VCE(sat) 5° 0.15 min.  SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing  Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit 0.23+−00..0052 12 (0.40) (0.40) 0.80±0.05 1.20±0.05 5° Collector-base voltage (Emitter open) e e) Collector-emitter voltage (Base open) c .