9 R 0.7
1
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2SD0638
PC Ta
800 800 700
IC VCE
Ta = 25°C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 400 300 200 100 0 3 mA 2 mA 1 mA 800 700
IC I B
VCE = 10 V Ta = 25°C
Collector power dissipation PC (mW)
700
Collector current IC (mA)
600 500 400 300 200 100 0
600 500
Collector current IC (mA)
600 500 400 300 200 100 0
0
20
40
60
80 100 120 140 160
0
4
8
12
16
20
0
2
4
6
8
10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base cu.
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Transistors
2SD0638 (2SD638)
Silicon NPN epitaxial planar type
For medium-power general amplification Complementary to 2SB0643 (2SB643)
(0.4)
(1.5) (1.5)
Unit: mm
6.9±0.1 2.5±0.1 (1.0)
2.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
*
1.0±0.1
(0.85)
2.4±0.2
0.45±0.05
VCBO VCEO VEBO IC ICP PC Tj Tstg
30 25 7 0.5 1 600 150 −55 to +150
V V V A A mW °C °C
3 (2.5) 2 (2.5) 1
1.25±0.05
Symbol
Rating
Unit
0.55±0.
2SD0638 Datasheet
