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2SD0814A - Silicon NPN Transistor

Key Features

  • s.
  • High collector-emitter voltage (Base open) VCEO.
  • Low noise voltage NV.
  • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 2 Unit: mm 0.40+0.10.
  • 0.05 3 0.16+0.10.
  • 0.06 1.50+0.25.
  • 0.05 2.8+0.2.
  • 0.3 (0.95) (0.95) 1.9±0.1 2.90+0.20.
  • 0.05 10˚.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitte.

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www.DataSheet4U.net Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification ■ Features • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 2 Unit: mm 0.40+0.10 –0.05 3 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.