Low collector-emitter saturation voltage VCE(sat).
Satisfactory operation performances at high efficiency with the lowvoltage power supply. 0.7±0.1
0.7±0.2
Unit: mm
5.0±0.2
5.1±0.2
4.0±0.2.
Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO.
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Transistors
2SD0965 (2SD965)
Silicon NPN epitaxial planar type
For low-frequency power amplification For stroboscope ■ Features
• Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.
0.7±0.1
0.7±0.2
Unit: mm
5.0±0.2
5.1±0.2
4.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 40 20 7 5 8 750 150 −55 to +150 Unit V V
1 2 3
2.3±0.2
12.9±0.5
0.45+0.15 –0.1 2.5+0.6 –0.2 2.5+0.6 –0.2
0.45+0.15 –0.
2SD0965 Datasheet