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Power Transistors
2SD1276, 2SD1276A
Silicon NPN triple diffusion planar type Darlington
0.7±0.1
For power amplification Complementary to 2SB950 and 2SB950A
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
4.2±0.2
Unit: mm
q q
16.7±0.3
q
High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
7.5±0.2
s Features
φ3.1±0.1
14.0±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1276 2SD1276A 2SD1276 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
4.0
1.4±0.1
1.3±0.2
Ratings 60 80 60 80 5 8 4 40 2 150 –55 to +150
Unit V
Solder Dip
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25 5.08±0.
2SD1276 Datasheet
