q q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings 25 20 12 1 0.5 600 150.
55 ~ +150 Unit V V
2.3±0.2
0.45.
0.1 1.27
+0.2
13.5±0.5
Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer rati.
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Transistor
2SD1302
Silicon NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
Unit: mm
5.0±0.2 4.0±0.2
s Features
q q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings 25 20 12 1 0.5 600 150 –55 ~ +150 Unit V V
2.3±0.2
0.45 –0.1 1.27
+0.2
13.5±0.5
Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE.
5.1±0.2
0.45 –0.1
1.27
+0.2
V A A mW ˚C ˚C
1 2 3
2.54±0.
2SD1302 Datasheet
