q q q q q
1.5
0.4
1.5 R0.9 R0.9
High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1
R
0.
0.85
0.55±0.1
1.25±0.05
0.45±0.05
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak c.
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Transistor
2SD1385
Silicon NPN triple diffusion planer type
For low-frequency output amplification
Unit: mm
6.9±0.1 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
s Features
q q q q q
1.5
0.4
1.5 R0.9 R0.9
High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
1.0±0.1
R
0.
0.85
0.55±0.1
1.25±0.05
0.45±0.