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2SD1444 - Silicon PNP Transistor

Key Features

  • q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB953 2SB953A 2SB953 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C).
  • 40.
  • 50.
  • 20.
  • 40.
  • 5.
  • 12.
  • 7 30 2 150.
  • 55 to +150 4.0 14.0±0.5 Solder Dip Ratings Unit V emitter voltage 2SB953A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C.

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Power Transistors 2SB953, 2SB953A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1444 and 2SD1444A 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB953 2SB953A 2SB953 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) –40 –50 –20 –40 –5 –12 –7 30 2 150 –55 to +150 4.0 14.0±0.5 Solder Dip Ratings Unit V emitter voltage 2SB953A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 16.7±0.