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2SD1458 - Silicon NPN Transistor

Datasheet Summary

Features

  • q q q 1.5 R0.9 R0.9 0.85 0.55±0.1 0.45±0.05 1.25±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
  • (Ta=25˚C) 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC.
  • Tj Tstg Ratings 20 20 15 1.5 0.7 1 150.
  • 55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC.
  • 71 M Type Mold Packag.

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Datasheet Details

Part number 2SD1458
Manufacturer Panasonic Semiconductor
File Size 37.33 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1458 Datasheet
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Full PDF Text Transcription

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Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9±0.1 1.5 0.4 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q q 1.5 R0.9 R0.9 0.85 0.55±0.1 0.45±0.05 1.25±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Ratings 20 20 15 1.5 0.7 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package 2.5 2.5 Printed circuit board: Copper foil area of thickness of 1.
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