q q q q
Extremely satisfactory linearity of the forward current transfer ratio hFE High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 500 400 12 14 7 0.5 50 2 150.
55 to +150 Unit V V V A A A W ˚C ˚C
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
14.0±0.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to bas.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SD1535
Silicon NPN triple diffusion planar type Darlington
For high power amplification
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2
Unit: mm
s Features
q q q q
Extremely satisfactory linearity of the forward current transfer ratio hFE High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 500 400 12 14 7 0.5 50 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
14.0±0.
2SD1535 Datasheet
