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2SD1633 - Silicon NPN Transistor

Key Features

  • High-speed switching.
  • Satisfactory linearity of forward current transfer ratio hFE.
  • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Solder Dip (4.0) 14.0±0.5.
  • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Base cu.

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Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit: mm 0.7±0.1 For voltage switching ■ Features • High-speed switching • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Solder Dip (4.0) 14.0±0.5 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Base current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 100 100 7 5 8 0.5 30 2.