Overview: Power Transistors
www.DataSheet4U.com 2SD1640
Silicon NPN epitaxial planar type darlington
Unit: mm For low-frequency output amplification
φ 3.16±0.1 8.0+0.5 –0.1 3.2±0.2 3.8±0.3 1.9±0.1 • High forward current transfer ratio hFE • Large peak collector current ICP • High collector-emitter voltage (Base open) VCEO ■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 120 100 5 2 3 1.2 150 −55 to +150 Unit V V V A A W °C °C
B
1 2 0.75±0.1 4.6±0.2 0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1 16.0±1.0 1: Emitter 2: Collector 3: Base TO-126B-A1 Package Internal Connection
C E ≈ 200 Ω ■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio
*1, 2 Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) Conditions IC = 100 µA, IE = 0 IC = 1 mA, IB = 0 IE = 100 µA, IC = 0 VCB = 25 V, IE = 0 VEB = 4 V, IC = 0 VCE = 10 V, IC = 1 A IC = 1.0 A, IB = 1.0 mA IC = 1.0 A, IB = 1.0 mA Min 120 100 5 Typ Max 3.05±0.
