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Power Transistors
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2SD1640
Silicon NPN epitaxial planar type darlington
Unit: mm
For low-frequency output amplification
φ 3.16±0.1
8.0+0.5 –0.1
3.2±0.2
3.8±0.3
1.9±0.1
• High forward current transfer ratio hFE • Large peak collector current ICP • High collector-emitter voltage (Base open) VCEO
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 120 100 5 2 3 1.2 150 −55 to +150 Unit V V V A A W °C °C
B
1 2 0.75±0.1 4.6±0.2
0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1
16.0±1.
2SD1640 Datasheet
