2SD1705 Description
Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm (0.7) For power switching plementary to 2SB1154 21.0±0.5 15.0±0.3 11.0±0.2 5.0±0.2 (3.2).
2SD1705 Key Features
- Low collector-emitter saturation voltage VCE(sat)
- Satisfactory linearity of forward current transfer ratio hFE
- Large collector current IC
- Full-pack package which can be installed to the heat sink with one screw