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2SD1705 - Silicon NPN Transistor

Key Features

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  • Low collector-emitter saturation voltage VCE(sat).
  • Satisfactory linearity of forward current transfer ratio hFE.
  • Large collector current IC.
  • Full-pack package which can be installed to the heat sink with one screw φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2.
  • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector curr.

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Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm (0.7) For power switching Complementary to 2SB1154 21.0±0.5 15.0±0.3 11.0±0.2 5.0±0.2 (3.2) ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.