Datasheet Summary
Power Transistors
Silicon NPN epitaxial planar type
For power switching plementary to 2SB1175
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm s Features q q q q
7.2±0.3
0.8±0.2
1.1±0.1
0.85±0.1 0.4±0.1
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 130 80 7 8 4 15 1.3 150
- 55 to +150 Unit V V
1.0±0.2
- 0.
+0.3
0.75±0.1
2.3±0.2 4.6±0.4 1 2 3 s...