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2SD1773 - Silicon NPN Transistor

Datasheet Summary

Features

  • q q q 0.7±0.1 4.2±0.2 Unit: mm 4.0 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 120 120 7 12 8 50 2 150.
  • 55 to +150 Unit V V V A A W ˚C ˚C 16.7±0.3 φ3.1±0.1 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipatio.

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Datasheet Details

Part number 2SD1773
Manufacturer Panasonic Semiconductor
File Size 62.08 KB
Description Silicon NPN Transistor
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Power Transistors 2SD1773 Silicon NPN triple diffusion planar type Darlington For midium speed switching Complementary to 2SB1193 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 7.5±0.2 s Features q q q 0.7±0.1 4.2±0.2 Unit: mm 4.0 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 120 120 7 12 8 50 2 150 –55 to +150 Unit V V V A A W ˚C ˚C 16.7±0.3 φ3.1±0.1 1.4±0.1 1.3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 14.0±0.5 0.8±0.1 0.5 –0.
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