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Transistor
2SD1821, 2SD1821A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise amplification
Unit: mm
s Features
q q q
2.1±0.1 0.425 1.25±0.1 0.425
High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C)
Ratings 150 185 150 185 5 100 50 150 150 –55 ~ +150 Unit
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1821 2SD1821A 2SD1821 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
0.2
0.9±0.1
V
0.7±0.1
0 to 0.1
0.2±0.
2SD1821 Datasheet
