2SD1823 Datasheet PDF - Panasonic Semiconductor Silicon NPN epitaxial planer type Transistor Specs

2SD1823 - Silicon NPN epitaxial planer type Transistor

Datasheet Summary

Features

q q q q q 2.1±0.1 0.425 1.25±0.1 0.425 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.2 (Ta=25˚C) Ratings 50 40 15 100 50 150 150.
55 ~ +150 Unit V V V mA mA mW ˚C ˚C 0.7±0.1 s Absolute Maximum Ratings Parame.

Datasheet Details

Part number	2SD1823
Manufacturer	Panasonic Semiconductor
File Size	36.57 KB
Description	Silicon NPN epitaxial planer type Transistor
Datasheet	2SD1823 Datasheet
Additional preview pages of the 2SD1823 datasheet.

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Full PDF Text Transcription

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Transistor 2SD1823 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm s Features q q q q q 2.1±0.1 0.425 1.25±0.1 0.425 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.2 (Ta=25˚C) Ratings 50 40 15 100 50 150 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 0.7±0.

Published: Apr 3, 2005 |