Datasheet Summary
Power Transistors
Silicon NPN triple diffusion planar type Darlington
For power amplification plementary to 2SB1253
Unit: mm
15.0±0.3 11.0±0.2 5.0±0.2 3.2 s Features q q q q
16.2±0.5 12.5 3.5 Solder Dip
Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 130 110 5 10 6 50 3 150
- 55 to +150 Unit V V V A A W
21.0±0.5 15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2 s...
