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2SD2210 - Silicon NPN epitaxial planer type Transistor

Key Features

  • q q q Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. (Ta=25˚C) Ratings 25 20 12 1 0.5.
  • 45° 1.0.
  • 0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0.
  • 0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
  • Symbol VCBO.

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Datasheet Details

Part number 2SD2210
Manufacturer Panasonic
File Size 42.10 KB
Description Silicon NPN epitaxial planer type Transistor
Datasheet download datasheet 2SD2210 Datasheet

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Transistor 2SD2210 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 2.6±0.1 0.4max. s Features q q q Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. (Ta=25˚C) Ratings 25 20 12 1 0.5 * 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0–0.20 0.4±0.