2SD2210 - Silicon NPN epitaxial planer type Transistor
Panasonic
Key Features
q q q
Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. (Ta=25˚C)
Ratings 25 20 12 1 0.5.
45°
1.0.
0.2
+0.1
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15
4.0.
0.20
0.4±0.04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
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Transistor
2SD2210
Silicon NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
Unit: mm
4.5±0.1 1.6±0.2
1.5±0.1
2.6±0.1
0.4max.
s Features
q q q
Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. (Ta=25˚C)
Ratings 25 20 12 1 0.5
*
45°
1.0–0.2
+0.1
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15
4.0–0.20
0.4±0.