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2SD2357 - Silicon NPN Transistor

Key Features

  • 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 q q q 1.0.
  • 0.2 +0.1 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.4max. 45° 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0.
  • 0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collec.

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Datasheet Details

Part number 2SD2357
Manufacturer Panasonic
File Size 36.02 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD2357 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1537 Unit: mm s Features 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 q q q 1.0–0.2 +0.1 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.4max. 45° 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings 10 10 5 1.