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Transistor
2SD2359
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
1.5±0.1 4.5±0.1 1.6±0.2
s Features
2.6±0.1
0.4max.
q q
Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
45°
1.0–0.2
+0.1
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15
4.0–0.20
0.4±0.04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
3
2
1
(Ta=25˚C)
Ratings 20 20 5 1.
2SD2359 Datasheet
