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2SD2441 - Silicon NPN Transistor

Key Features

  • q 4.5±0.1 1.6±0.2 1.5±0.1 0.4max. 45° 1.0.
  • 0.2 +0.1 0.4±0.08 4.0.
  • 0.20 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
  • 0.5±0.08 1.5±0.1 0.4±0.04 (Ta=25˚C) Ratings 10 10 7 2 1.5 1 150.
  • 55 ~ +150 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 3 3.0±0.15 2 1 Symbol VCBO VCEO VE.

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Datasheet Details

Part number 2SD2441
Manufacturer Panasonic
File Size 36.08 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD2441 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SD2441 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm s Features q 4.5±0.1 1.6±0.2 1.5±0.1 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 4.0–0.20 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * 0.5±0.08 1.5±0.1 0.4±0.04 (Ta=25˚C) Ratings 10 10 7 2 1.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 3 3.0±0.15 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg marking EIAJ:SC–62 Mini Power Type Package Marking symbol : 1V Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.