Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current.
Base current Collector power dissipation Junction temperature Storage temperature Note) Non-rep.
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Power Transistors
2SD2453
Silicon NPN triple diffusion planar type
Unit: mm
For high current transfer ratio and power amplification ■ Features
• High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)
6.5±0.1 5.3±0.1 4.35±0.1
2.3±0.1 0.5±0.1
7.3±0.1
1.8±0.1
0.8 max.
2.5±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current * Base current Collector power dissipation Junction temperature Storage temperature Note) Non-repetitive peak collector current Tj Tstg TC = 25°C Symbol VCBO VCEO VEBO IC ICP IB PC Rating 80 60 6 2 4 1 10 1 150 −55 to +150 °C °C Unit V V V A A A W
0.75±0.1 2.3±0.1 4.6±0.1
1.
2SD2453 Datasheet
