Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio.
Collector-emitter saturation voltage.
Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VC.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistors
2SD2504
Silicon NPN epitaxial planar type
For low-frequency power amplification
www.DataSheet4U.com
Unit: mm
5.0±0.2 4.0±0.2
0.7±0.1
0.7±0.2 12.9±0.5
• Low collector-emitter saturation voltage VCE(sat) • Large collector current IC
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current * Collector power dissipation Junction temperature Storage temperature Note) *: t = 380 µs Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 15 10 10 5 9 750 150 −55 to +150 Unit V V V A A mW °C °C
0.45+0.15 –0.1 2.5+0.6 –0.2 1 2 3
5.1±0.2
0.45+0.15 –0.1 2.5+0.6 –0.2
■ Features
2.3±0.
2SD2504 Datasheet
