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2SD602A - Silicon NPN Transistor

Key Features

  • q q 2.8.
  • 0.3 0.65±0.15 +0.2 2.9.
  • 0.05 1.9±0.2 +0.2 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 1.5.
  • 0.05 +0.25 0.65±0.15 0.95 1 0.95 3 0.4.
  • 0.05 +0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD602 2SD602A 2SD602 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol 2 1.1.

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Datasheet Details

Part number 2SD602A
Manufacturer Panasonic
File Size 40.05 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD602A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB710 and 2SB710A Unit: mm s Features q q 2.8 –0.3 0.65±0.15 +0.2 2.9 –0.05 1.9±0.2 +0.2 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 1.5 –0.05 +0.25 0.65±0.15 0.95 1 0.95 3 0.4 –0.05 +0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD602 2SD602A 2SD602 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol 2 1.1 –0.