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Transistor
2SD814, 2SD814A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise amplification
Unit: mm
s Features
q q q
2.8 –0.3 0.65±0.15
+0.2
0.95
High collector to emitter voltage VCEO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C)
1.5 –0.05
+0.25
0.65±0.15
0.95
2.9 –0.05
1
1.9±0.2
+0.2
3
0.4 –0.05
+0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD814 2SD814A 2SD814 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol
2
1.45
1.1 –0.1
+0.
2SD814A Datasheet
