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2SD966 - Silicon NPN Transistor

Download the 2SD966 datasheet PDF. This datasheet also covers the 2SD0966 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • s.
  • Low collector-emitter saturation voltage VCE(sat).
  • Satisfactory operation performances at high efficiency with the lowvoltage power supply. 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SD0966_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SD966
Manufacturer Panasonic
File Size 94.94 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD966 Datasheet

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Other Datasheets by Panasonic

Part Number Description
2SD966 Silicon NPN epitaxial planer type Transistor
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2SD968 Silicon PNP epitaxial planer type Transistor
2SD968A Silicon PNP epitaxial planer type Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.net Transistors 2SD0966 (2SD966) Silicon NPN epitaxial planar type For low-frequency amplification For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply. 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 40 20 7 5 8 1 150 −55 to +150 Unit V V V A A W °C °C 1 2 3 0.45+0.2 –0.1 (1.27) 13.5±0.5 0.7+0.3 –0.2 8.6±0.2 0.45+0.2 –0.1 (1.27) 2.54±0.