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2SD973 - Silicon NPN Transistor

Key Features

  • q q 1.5 1.0±0.1 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C) Ratings 30 60 25 50 5 1.5 1 1 150.
  • 55 ~ +150 1cm2 Unit V 1.5 R0.9 R0.9 R 0. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD973 2SD973A 2SD973 VCEO VEBO ICP IC PC.
  • Tj Tstg VCBO Symbol 0.85 0.55±0.1 1.25±0.05 0.45±0.05 3 2 1 emitter voltage 2SD.

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Datasheet Details

Part number 2SD973
Manufacturer Panasonic
File Size 49.02 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD973 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SD973, 2SD973A Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9±0.1 0.4 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q 1.5 1.0±0.1 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C) Ratings 30 60 25 50 5 1.5 1 1 150 –55 ~ +150 1cm2 Unit V 1.5 R0.9 R0.9 R 0. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD973 2SD973A 2SD973 VCEO VEBO ICP IC PC* Tj Tstg VCBO Symbol 0.85 0.55±0.1 1.25±0.05 0.45±0.