2SK0123
Features q High mutual conductance gm q Low noise voltage of NV
1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20
- 0.05 10˚
Unit: mm
0.40+0.10
- 0.05 3 0.16+0.10
- 0.06
1.50+0.25
- 0.05
2.8+0.2
- 0.3 s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Drain to Gate voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr Tstg Ratings 20 20 2 2 2 200
- 20 to +80
- 55 to +150 Unit V V m A m A m A m W °C °C
1.1+0.2
- 0.1
(0.65)
0 to 0.1
1.1+0.3
- 0.1
1: Drain 2: Source 3: Gate Mini3-G1 Package
Marking Symbol: 1H
Note: For the forming type, (Y) is indicated after the part No. s Electrical Characteristics (Ta = 25°C)
Parameter Current consumption Drain to Source cut-off current Mutual conductance Noise figure Symbol ID IDSS gm NV Conditions VD = 4.5 V, CO = 10 p F, RD = 2.2 kΩ ± 1% VDS = 4.5 V, VGS = 0 VD = 4.5 V, VGS = 0, f = 1 k Hz VD = 4.5V, RD =...
