2SK1842 - Silicon N-Channel Junction FET

Panasonic

Key Features

q Low gate to source leakage current, IGSS q Small capacitance of Ciss, Coss, Crss q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9.
0.05 1 1.9±0.2 +0.2 0.95 3 0.4.
0.05 +0.1 2 Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature VGSO ID IG PD Tj Tstg.
40 1 10 150 150.
55 to +150 V mA mA mW °C °C.

2SK1842 silicon n-channel junction fet by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SK1842
Manufacturer	Panasonic
File Size	32.19 KB
Description	Silicon N-Channel Junction FET
Datasheet	2SK1842 Datasheet

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Full PDF Text Transcription (Reference)

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Silicon Junction FETs (Small Signal) 2SK1842 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 0.65±0.15 +0.2 unit: mm 0.65±0.15 2.8 –0.3 1.5 –0.05 +0.25 s Features q Low gate to source leakage current, IGSS q Small capacitance of Ciss, Coss, Crss q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.