• Part: 2SK3024
  • Description: Silicon N-Channel Power F-MOS FET
  • Manufacturer: Panasonic
  • Size: 24.17 KB
Download 2SK3024 Datasheet PDF
Panasonic
2SK3024
2SK3024 is Silicon N-Channel Power F-MOS FET manufactured by Panasonic.
Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 7.3±0.1 1.8±0.1 unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1 s Applications 2.5±0.1 0.8max 0.93±0.1 1.0±0.1 0.1±0.05 0.5±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS- PD Tch Tstg Ratings 60 ±20 ±20 ±40 20 20 1 150 - 55 to +150 Unit V V A A m J 1 2 0.75±0.1 2.3±0.1 4.6±0.1 1: Gate 2: Drain 3: Source U Type Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature - TC = 25°C Ta = 25°C Internal Connection W °C °C L = 0.1m H, IL = 20A, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 30V, ID = 10A VGS = 10V, RL = 3Ω Conditions VDS = 50V, VGS = 0 VGS = ±20V, VDS = 0 ID = 1m A, VGS = 0 VDS = 10V, ID = 1m A VGS = 10V, ID = 10A VGS = 4V, ID = 10A VDS = 10V, ID = 10A IDR = 20A, VGS = 0 330 VDS = 10V, VGS = 0, f = 1MHz 290 70 20 125 520 1480 6.25 125 8 60 1 33 44 12 - 1.5 2.5 50 70 min typ max 10 ±10 Unit µA µA V V mΩ mΩ S V p F p F p F ns ns ns ns °C/W °C/W Input capacitance (mon Source) Ciss Output capacitance (mon Source) Reverse transfer capacitance (mon Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere 1.0±0.2...