q Avalanche energy capacity guaranteed q High-speed switching q No secondary breakdown q High electrostatic breakdown voltage
6.5±0.1 5.3±0.1 4.35±0.1
unit: mm
2.3±0.1 0.5±0.1
s.
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Power F-MOS FETs
2SK3124
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q No secondary breakdown q High electrostatic breakdown voltage
6.5±0.1 5.3±0.1 4.35±0.1
unit: mm
2.3±0.1 0.5±0.1
s Applications
q High-speed switching (switching power supply) q For high-frequency power amplification
7.3±0.1
1.8±0.1
2.5±0.1
0.8max
0.93±0.1
1.0±0.1 0.1±0.05 0.5±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 400 ±20 ±0.5 ±1 0.25 10 1 150 −55 to +150 Unit V V A A mJ W °C °C
0.75±0.1 2.3±0.1 4.6±0.
2SK3124 Datasheet
