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A1123 - Silicon PNP Transistor

Key Features

  • q Satisfactory foward current transfer ratio hFE collector current IC characteristics. q High collector to emitter voltage VCEO. q Small collector output capacitance Cob. q Makes up a complementary pair with 2SC2631, which is opti- mum for the pre-driver stage of a 20 to 40W output amplifier. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction.

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Datasheet Details

Part number A1123
Manufacturer Panasonic
File Size 35.36 KB
Description Silicon PNP Transistor
Datasheet download datasheet A1123 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 s Features q Satisfactory foward current transfer ratio hFE collector current IC characteristics. q High collector to emitter voltage VCEO. q Small collector output capacitance Cob. q Makes up a complementary pair with 2SC2631, which is opti- mum for the pre-driver stage of a 20 to 40W output amplifier. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –150 –150 –5 –100 –50 750 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 13.